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 2N5551
Elektronische Bauelemente
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
4.550.2
NPN Silicon
General Purpose Transistor
TO-92
3.50.2
4.50.2
FEATURES
* Switching and amplification in high voltage
14.30.2
0.46 +0.1 -0.1 (1.27 Typ.) 1.25-0.2 123
+0.2
* Low current(max. 600mA) * High voltage(max.180v)
0.43 +0.08 -0.07
1: Emitter 2: Base 3: Collector
MAXIMUM RATINGS* TA=25ae unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ, Tstg Para Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature meter 180 160 6 0.6
2.540.1
Value
Units V V V A W
0.625 -55-150
ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO* V(BR)EBO ICBO IEBO hFE1* DC current gain hFE2* hFE3 Collector-emitter saturation voltage VCEsat* Test conditions MIN 180 160 6 50 50 80 80 30 0.15 0.2 1 1 100 300 6 20 8 V 250 TYP MAX UNIT V V V
Ic= 100 A,IE=0 Ic= 1mA, IB=0 IE= 10A, IC=0 VCB= 120V VEB= 4V, IC=0 VCE= 5 V, VCE= 5 V, VCE= 5 V, IC= 1 mA IC = 10 mA IC= 50 mA IE=0
nA
nA
IC= 10 mA, IB= 1 mA IC= 50 mA, IB= 5 mA IC= 10 mA, IB= 1 mA IC= 50 mA, IB= 5 mA VCE=10V,IC=10 mA,,f=100MHz VCB=10V,IE=0,f=1MHz VBE=0.5V,IC=0,f=1MHz VCE=5V,Ic=0.25mA, f=1KHZ,Rg=1k
Base-emitter saturation voltage Transition frequency Collector output capacitance Input capacitance Noise figure *Pulse test
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
VBEsat*
V MHz pF pF dB
fT
Cob Cib NF
Any changing of specification will not be informed individual
Page 1 of 2
2N5551
Elektronische Bauelemente
NPN Silicon
General Purpose Transistor
ELECTRICAL CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2


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